News

IEEE1d
Energy band-structure estimation of semiconductor nanotubes with consideration of momentum space quantization - IEEE Xplore
Abstract: In the current work, the effect of quantum confinement in the band structure of semiconductor nanotubes is investigated. The confinement of electrons in the momentum space is incorporated in ...
C&EN14d
Self-Powered Au/MgZnO/Nanolayered Ga-Doped ZnO/In Metal–Insulator–Semiconductor UV Detector with High Internal Gain at Deep UV Light under Low Voltage - ACS Publications
Au/MgZnO/nanolayered ZnO (Ga-doped)/In MIS (metal–insulator–semiconductor) structure UV detectors are fabricated by the PLD (pulsed laser deposition) method, and the effect of different thickness ...
IEEE27d
Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper) - IEEE Xplore
Energy band diagrams for MOS devices are essential for understanding device performance and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2) interfacial layer requires an ...