Comparative analyses evaluated the effects of absorber layer composition, doping densities, thickness variations, and operating temperature on critical photovoltaic parameters, including short-circuit ...

Precision Measurements of the Ionization Energy and Its Temperature Variation in High ... However (Δe-/ΔWG) = 2.87 ± 0.07 is significantly higher. The measured values of ε in electron volts per hole ...

Research indicates that electron-phonon interactions in atomically thin semiconductors enhance conductivity, paving the way ...

A condition long considered to be unfavorable to electrical conduction in semiconductor materials may actually be beneficial ...

As few as five electrons in a semiconductor can exhibit collective behaviour, forming a “Coulomb liquid”, according to ...

- The global market for semiconductor devices for high-temperature applications was valued at $10.9 billion in 2023 and is projected to reach $18.5 billion by the end of 2029, at a CAGR of 9.4% ...

Electron transport in gallium nitride (GaN) and zinc oxide (ZnO) remains a field of intense study due to the promise these wide energy gap semiconductors hold for high-power, high-frequency and ...

Abstract: During the electron-beam evaporation of metals, a weakly ionized plasma is formed, which consists of two different groups of electrons characterized by different energy spreads (or ...

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Stable free radical formation in fructose single crystals X-irradiated at room temperature was investigated using Q-band electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR ...