Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...
The recently released components include dual diodes in parallel configuration with total forward current ratings ranging from 40 A to 240 A, along with single-phase bridge devices rated at 50 A and ...
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT ...
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
Designed to deliver high speed and efficiency for high frequency applications, the devices are said to offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in ...
This dual-role control capability simplifies the design of these once-complex PLANO, Texas, December 04, 2024--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces the ZXCT18xQ series of ...
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