Department of Chemistry, School of Physical and Chemical Sciences, Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa ...

Graded layer in AlN Schottky barrier diodes increases their maximum current density by three orders of magnitude ... enabling AlN devices with blocking voltages in the 10 kV range to have drift layers ...

Sheet Bonding Material That Allows Bonding of High-Current Large Silicon (Si) Chips In recent years, there has been rising demand for high-current power semiconductors centered on applications ...

NVIDIA is “by far the most important” company in the semiconductor industry. “I am sure most of the design of NVIDIA and AMD GPUs must have been done in India by Indian engineers,” Chowdhry said. This ...

VeriSilicon SMIC 0.13um High-Speed Synchronous Single-Port SRAM compiler optimized for Semiconductor Manufacturing International Corporation (SMIC) 0.13um Logic 1P8M Salicide 1.2/2.5(3.3)V process ...

The export controls on AI Diffusion are scheduled to take effect ... President of the India Electronics and Semiconductor Association (IESA). “India should invest in designing AI-specific ...

Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States Department of Electrical Engineering and Computer ...

4c, d). These balanced drift–diffusion devices are representative of the best infrared CQD photovoltaics. In the light-absorbing semiconductor portion of the metal–intrinsic–metal device of Fig.

His research focuses on the varieties of policies governing electric vehicles (EVs) and policy diffusion in the context of China.