Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in ...

Specifically, the diffusion model is first pretrained with unlabeled HSI patches to mine the connotation of unlabeled data, and then is used to extract the multi-timestep multi-stage diffusion ...