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Abstract: Heavily doped 4H-silicon carbide (SiC) epitaxial p-n junction diodes are fabricated, and their tunneling current under reverse-biased condition is investigated. Soft increase of the leakage ...

Abstract: This paper presents a study on the PN junction reversed leakage current of zener diode attributed to the surface recombination, and the drift behavior after reliability stress. The leakage ...

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201, United States of America Article Views are the COUNTER-compliant sum of full text article downloads ...