n-GaN Schottky barrier diodes were fabricated on a sapphire substrate. Ni/Au and Ti/Al/Mo/Au were used for Schottky and ohmic contacts, respectively. A better fitted characteristic was obtained by ...

A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized to ...