WILMINGTON, DE, UNITED STATES, July 3, 2025 /EINPresswire.com/ -- According to a new report published by Allied Market Research, titled, “IGCT Market by Type, Application, and Region: Global ...

We have integrated a fast recovery diode in the structure of a power bipolar transistor. This integral diode is physically connected between the emitter and the collector of the transistor and can be ...

In this paper, a new power bipolar transistor structure called the trench base-shielded bipolar transistor (TBSBT) Is proposed and experimentally demonstrated. This structure incorporates deep p/sup + ...

A hobbyist-developed spin-on glass dopant offers a cost-effective alternative to commercial semiconductor doping techniques.