Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
Reducing power loss by 80% compared to general-purpose devices, the BISS family of SMT bipolar transistors has a saturation voltage below 60 mV at 1 A. The devices can serve in applications from ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series.
Providing a space saving of more than 80% over an SOT223-packaged device, ZXTN and ZXTP Series bipolar transistors use the 2.50 x 3.05-mm footprint SOT23. Ideal drivers of power MOSFETs, IGBTs, dc ...
Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...
Nexperia has announced 20 bipolar power transistors in 2 x 2mm DFN2020D-3 packaging, half of them automotive-qualified. The span 50 and 80V ratings, 1 to 3A currents and both npn and pnp polarities.
The STMicroelectronics 3STL2540 combines the cost and silicon-area efficiencies of a bipolar transistor with energy efficiency similar to MOSFETs of comparable rating, giving designers a space-saving ...
To extend its BiCOM biCMOS process into the next generation, Texas Instruments is tapping the benefits of complementary silicon-germanium (SiGe) bipolar transistors. TI has developed a third ...
Only eight lithography masks to create a low-power custom logic chips, compared with 20+ for CMOS, is the claim of Nottingham-based fabless chip start-up ‘Search For The Next’ (SFN). As such, ...
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