Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a 650V discrete insulated gate bipolar transistor (IGBT) “GT30J65MRB” for the power factor ...

The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...

PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series.

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Infineon’s RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the ...

For switching high-powered loads from a microcontroller, or for switching AC loads in general, most of us will reach into the ...