Measuring the mobility of thin-film transistors fabricated using newly developed semiconductors is difficult because of various factors, such as contact resistance. In this work, the generalized gated ...

With the aid of an analytical and general model, this paper investigates the intrinsic difference in the negative-capacitance (NC) effect and design space between semiconductor-on-insulator (SOI) and ...

The optical extinction spectra arising from localized surface plasmon resonance in doped semiconductor nanocrystals (NCs) have intensities and lineshapes determined by free charge carrier ...