SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...

SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...

DUBLIN--(BUSINESS WIRE)--The "IGBT and Super Junction MOSFET - Global Strategic Business ... Insulated Gate Bipolar Transistors (IGBTs) and Super Junction Metal-Oxide-Semiconductor Field-Effect ...

This rivalry is increasing interest in AI-based cryptocurrencies. NEAR Protocol (NEAR) and Artificial Superintelligence Alliance (FET) are expected to benefit from this growth. Holders are also ...

Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States ...

What even is a field watch? Unlike most types of watch, this one cannot be easily and definitely described in a sentence, or with a set of specifications. Instead, it’s best to think of a field watch ...

By 'advanced,' the new rules mean processors made on 14nm or 16nm process technologies or more advanced that contain 30 billion transistors or more, according to Bloomberg. But there will be ...

With the NFL playoffs in full swing, the Kansas City Chiefs will host their first postseason matchup on home turf as they seek a third consecutive Super Bowl win. The Chiefs notched a No. 1 seed ...

While conducting their study, they discovered that 2D materials can also be uniquely engineered to create an entirely new transistor architecture, which they dubbed nano-plate FET (NPFET). This ...

Abstract: This study proposes improved compact models for impact ionization in the intrinsic and drift regions of Laterally-Diffused-Metal-Oxide-Semiconductor (LDMOS) transistors. These models are ...