The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
Samsung was the first fab to launch a 3nm process in mid-2022, beating TSMC to market by about six months. Plus, its 3nm node offers gate-all-around (GAA) transistors, which none of its rivals have ...
The new fabrication technique for all-2D transistors on flexible substrates offers a sustainable alternative, boosting ...
At Semicon West 2013, the annual mecca for chipmakers and their capital equipment manufacturers, Applied Materials has detailed the road beyond 14nm, all the way down to 3nm and possibly beyond. Share ...
The first printed transistor made entirely from layered materials could pave the way for low-cost electronic devices to be fitted into billions of everyday objects. Printed electronics are already ...
In mobiles, fridges, planes -- transistors are everywhere. But they often operate only within a restricted current range. Physicists have now developed an organic transistor that functions perfectly ...
“To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require ...
In brief: While covering a wide range of topics during his keynote at Nvidia's GTC, CEO Jensen Huang briefly touched on the company's GPU roadmap beyond the upcoming Rubin architecture. The Feynman ...
This year sees more competition in the CPU marketplace than at any other time in the last decade. Since 2006, when Intel released its Core architecture, the company has been the default choice for PC ...
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