A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...

Energy band diagram of pn junction under forward bias, Continuity equation, Boundary conditions, Ideal diode equation, Long- and short-base diodes, Recombination and generation in the depletion region ...

The PN junction is one of the primary building blocks of semiconductors. A diode (one way valve) is a PN junction with p-type on one side and n-type on the other. When a positive voltage is ...

This second course provides a more detailed description of high-voltage Schottky and p-n diodes, starting with the semiconductor physics background needed to analyze both types of diodes. The main ...

For instance, a study reported a breakdown voltage of 8.32 kV and a specific on-resistance of 5.24 mΩ·cm² for Ga2O3 heterojunction PN diodes, achieving a power figure-of-merit that exceeds the ...

A brief introduction to solid-state physics, leading to discussion of physical characteristics of p-n junction diodes, bipolar junction transistors, and field-effect transistors: active, saturated, ...