while in the SiC IGBT process, buffer layer thickness and free carrier concentration are critical because they determine key parameters like switching speed and conduction losses. Both types of ...

Pakal Technologies, Inc., an innovator in high-voltage power conversion semiconductor technology, has raised $25 million in Series B funding led by New Science Ventures, with participation from Series ...

These two components are useful for large industrial equipment, such as railcars and DC power transmitters. With proprietary IGBT devices and advanced insulation structures, the S1-Series modules ...

Infineon Technologies AG  introduces new isolated gate driver ICs for electric vehicles to enhance its EiceDRIVER family. The ...

Equipped with an eighth-generation insulated gate bipolar transistor (IGBT), the module minimizes power loss and maximizes output power of inverters and other components in power systems ...

The devices are RoHS-compliant and feature high noise immunity of 50 kV/µs, which is crucial for preventing functional ...

Silicon power electronic devices such as IGBTs and MOSFETs can also be controlled via the gate. Here less speed is required, e.g. 120 MHz arbitrary waveform generation is adequate. Therefore, it can ...

The incumbent silicon IGBT power semiconductor is an essential work ... gap between emerging more expensive Silicon Carbide (SiC) devices and the incumbent silicon IGBT. From EVs to solar ...