GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Pakal Technologies, Inc., an innovator in high-voltage power conversion semiconductor technology, has raised $25 million in Series B funding led by New Science Ventures, with participation from Series ...

while in the SiC IGBT process, buffer layer thickness and free carrier concentration are critical because they determine key parameters like switching speed and conduction losses. Both types of ...

Infineon Technologies AG has introduced new isolated gate driver ICs for EVs to enhance its EiceDRIVER family. The devices are designed for the latest IGBT and SiC technologies. Also, they support the ...

Infineon Technologies has launched isolated gate drivers for the latest hybrid IGBT and SiC inverter modules in electric ...

Infineon Technologies AG  introduces new isolated gate driver ICs for electric vehicles to enhance its EiceDRIVER family. The ...

Equipped with an eighth-generation insulated gate bipolar transistor (IGBT), the module minimizes power loss and maximizes output power of inverters and other components in power systems ...

The devices are RoHS-compliant and feature high noise immunity of 50 kV/µs, which is crucial for preventing functional ...

Innovations in cool-running packaging technologies and embedded passive networks are enabling power devices to run at higher ...

The incumbent silicon IGBT power semiconductor is an essential work ... gap between emerging more expensive Silicon Carbide (SiC) devices and the incumbent silicon IGBT. From EVs to solar ...