electronics360.globalspec3d
Vishay Intertechnology 650 V and 1,200 V SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
eeworldonline5d
SiC Schottky diode range handles 40 A to 240 A
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
Compoundsemiconductor.net10d
Vishay launches new high voltage SiC diodes
The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling.
Nasdaq10d
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
Features such as high temperature operation up to +175 °C and easy paralleling enhance the usability of these diodes in demanding applications, making them attractive to engineers and designers.
Electropages6d
SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications
Vishay Intertechnology, Inc. has introduced 16 new 650V and 1200V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency ...
electronicsforu10d
SiC Schottky Diodes For High-Frequency Applications
With features like a low forward voltage drop, minimal capacitive charge, and high-temperature operation, these diodes are ideal for power conversion in AC/DC PFC, photovoltaic systems, and more.
CU Boulder News & Events1y
ECEA 5722 High-Voltage p-n and Schottky Diodes
Schottky diodes and MOSFETs as well as Gallium Nitride (GaN) HEMTs. The specialization provides an overview of devices, the physics background needed to understand the device operation, the ...