This family of GaN (gallium-nitride) HEMTs (high-electron-mobility transistors) targets cellular infrastructures and WiMax base stations. The devices feature a 67% peak drain efficiency at the UMTS ...
Austin, Tex. — Freescale Semiconductor has released seven LDMOS RF power transistors that are said to deliver exceptional performance and enable WCDMA and CDMA2000 base station transmitters to exploit ...
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