IIIF provides researchers rich metadata and media viewing options for comparison of works across cultural heritage collections. Visit the IIIF page to learn more. Equipment invented by donor at TI to ...
A new generation of high-voltage gallium arsenide power amplifier transistors is designed to substantially boost the efficiency of 3G cellular base stations, reducing energy costs while allowing ...
The PTFB family of high-power LDMOS transistors PTFB212503EL V1, PTFB212503FL V1, and PTFB213004F V1 targets broadband wireless network base stations. The devices provide 300W power levels and video ...
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A transistor fabricated from the crystalline phase of an organic semiconductor material could provide a path to improved switching speeds — rivalling those of devices built from inorganic materials ...
Transistor lasers represent a hybrid semiconductor device that unites the signal-amplifying capabilities of a bipolar transistor with the coherent light emission of a laser. Central to their operation ...