This involves exploring various substrate technologies, including Fully Depleted Silicon-on-Insulator (FD-SOI) and high-resistivity substrates, which are designed to minimize losses and improve ...
The main difference between conventional MOS structure and SOI MOS structure is that SOI device has a buried oxide layer, which isolates the body from the substrate. As shown in the Figure 7, SOI ...
The newly developed technology uses SOI (Silicon On Insulator) technology*1, and individually controls the potential of the bodies − that is, substrate parts − of the three kinds of transistors ...