The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.
Multi-Year Development with DARPA Drives Core BAW Technology Differentiation Advanced Single-Crystal Material Delivers Improved Power Handling and Harmonics Enables Broader Use Case for BAW Technology ...
Wolfspeed, Inc. (NYSE: WOLF), a global leader in silicon carbide technology, today announced a significant industry milestone with the successful production of a single crystal 300mm (12-inch) silicon ...
Device level SiC wafers require a systematic process including single crystal growth, wire cutting, lapping or grinding, and chemical mechanical polishing. SiC wafers have important application value ...
Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron ...
The global market for 12 Inch Silicon Wafers was valued at USD 11620 Million in the year 2024 and is projected to reach a revised size of USD 20790 Million by 2031, growing at a CAGR of 8.8% during ...
La Luce Cristallina today announced it has launched its new CMOS-compatible oxide pseudo-substrate, enabling high-quality, ...
Diamond wire sawing is a critical cutting technology in the semiconductor and photovoltaic industries, employed to slice single-crystal silicon ingots into thin wafers. The process utilises a ...
OKI (TOKYO: 6703) has successfully developed Tiling crystal film bonding (CFB; Note 1) technology using its proprietary CFB technology. This technology makes possible the heterogeneous integration of ...
Round led by Equirus Innovatex Fund and Artha Venture Fund, with participation from IvyCap Ventures, PointOne Capital, CIIE ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results