Materials like silicon carbide and gallium nitride are pushing the limits of conventional test methods, requiring innovative solutions to ensure reliability and efficiency in the test process.

De Heer’s first breakthrough in creating a graphene semiconductor came when his team figured out how to grow graphene on silicon carbide wafers using special furnaces. This process resulted in ...

We have succeeded in intercalating gold atoms between the first carbon monolayer and the silicon carbide substrate. Thereby, the graphene-to-substrate distance is increased and the graphene layer is ...

A global leading manufacturer of silicon carbide devices (Wolfspeed) announced its plan to construct the world’s largest and the most advanced silicon carbide device manufacturing facility in ...

THIS communication describes a method of preparing colourless, extremely pure crystals of α-silicon carbide by a modified Lely process in a high-vacuum, high-temperature furnace from silicon of a ...

HIROSHIMA—Researchers said they have developed a durable silicon carbide-based semiconductor that enables electronic devices to function in extreme conditions, such as at crippled nuclear power ...

Scientists overcame a limitation in graphene to harness the material as a working semiconductor at terahertz frequencies with 10 times the mobility of silicon.

Silicon is one of many steps in the history of electronics, and the next step could be graphene. "To me, this is like a Wright brothers moment," de Heer said. "They built a plane that could fly ...

Reference: Zhao J, Ji P, Li Y, et al. Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide. Nature . 2024;625(7993):60-65. doi: 10.1038/s41586-023-06811-0 This article is a rework ...