Traditionally, the Schottky diode equation is often used for characterization of I-V curve of metal/semiconductor contact. Thus researchers in the device community still blindly employ this “old” ...

Munich, Germany — Infineon Technologies AG has launched its second-generation Schottky diodes based on silicon carbide (SiC) technology at this week's Applied Power Electronics Conference (APEC) trade ...

Central Semiconductor has released three EEDTM low-leakage diodes. The CMDSH2-4L, CMOSH2-4L and CMUSH2-4L all consist of a single Schottky diode chip providing a maximum current ...

Duraton: 4 hours. In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, ...

The DIODES™ SDM5U45EP3 (5A, 45V), DIODES™ SDM4A40EP3 (4A, 40V), and DIODES™ SDT4U40EP3 (4A, 40V) achieve the industry’s highest current densities in their class, addressing market demands ...

Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

Vishay Intertechnology, Inc. launched four new Gen. 5.0 high-performance 45-V and 100-V Schottky diodes that set a new standard in the industry by extending the D-Pak current capability up to 20 A ...

Toshiba launched second generation 650V silicon carbide (SiC) schottky barrier diodes (SBDs) that improve on the surge forward current offered by the ...