Hybrid or heterogeneous integration solutions, such as flip-chip, micro-transfer printing or die-to-wafer bonding, involve complex bonding processes or the need for expensive III-V substrates ...
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
Taisic Materials navigates SiC oversupply by focusing on larger eight-inch wafers, eyeing growth in US and Japan Nuying Huang, Taipei; Jingyue Hsiao, DIGITIMES Asia Thursday 9 January 2025 0 GM of ...
The ambitious project pegged at an investment of INR140 billion (US$1.62 billion), will focus on the production of silicon carbide (SiC ... to produce 10,000 wafers per month, is expected to ...