electronics360.globalspec3d
Vishay Intertechnology 650 V and 1,200 V SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
Electronic Design2d
SiC MOSFETs Tackle Tough Conditions in High-Power Electronics
Wolfspeed specifically designed its latest generation of SiC MOSFETs to be a better fit for both hard- and soft-switching ...
eeworldonline5d
SiC Schottky diode range handles 40 A to 240 A
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
1 Artificial Intelligence (AI) Stock That Could Be a Once-in-a-Decade Opportunity
The transformative power of artificial intelligence (AI) is undeniable. A recent McKinsey & Company research report estimates ...
IIT-BBS opens silicon carbide research centre
Bhubaneswar: IIT Bhubaneswar has opened a Silicon-Carbide Research and Innovation Centre (SiCRIC) on its campus to indigenize the know-how of silicon .
Electronic Design9d
100-V Silicon MOSFETs Keep Pace with SiC and GaN Counterparts
Based on a new manufacturing process, the split-gate MOSFETs developed by Renesas show significant improvements in power ...
Electronic Products4d
Vishay expands SiC Schottky diode portfolio
The new SiC Schottky diodes deliver high speed and efficiency in high frequency applications. They offer the best trade-off ...
Navitas’ GaN & SiC Devices Power Dell’s™ Family of AI Notebooks
Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...
eeworldonline5d
Dual-output gate driver ICs support silicon and SiC power modules
Infineon Technologies AG  introduces new isolated gate driver ICs for electric vehicles to enhance its EiceDRIVER family. The ...