Freescale Semiconductor has reinforced its commitment to the commercial aerospace market with the introduction of a high-performance laterally diffused metal oxide semiconductor (LDMOS) RF power ...

The U.S. LDMOS RF Power Transistor Market size is estimated to be valued at USD 0.34 billion in 2024 and is projected to grow at a CAGR of 8.90%, reaching USD 0.67 billion by 2032The shift toward ...

Microsemi's new power transistors also reduce system size. As an example, the company's 2729GN-270 transistor replaces a conventional three-stage Si BJT transistor amplifier consisting of a driver ...

STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...

Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.

Freescale introduces ultra-efficient, high-power LDMOS RF transistor for digital/analog TV broadcast amplifiers. Low thermal resistance technology enhances heat dissipation, ...

The RF Power Systems Market is projected to grow from USD 3.9 billion in 2024 to USD 6.6 billion by 2032, at a 6.82% CAGR. Rising demand in telecommunications, defense, and medical sectors drives this ...

A 28-V, 5-W class high electron mobility transistor (HEMT) from Nitronex now operates at frequencies that fall between 5.1 GHz to 5.2 GHz and 5.7 GHz to 5.8 GHz. The NPTB00004 gallium nitride on ...

Ampleon has announced a high-750W RF power transistor offering 72.5% at 915MHz, built on the firm’s Gen9HV 50V process. Called BLF0910H9LS750P, it operates from 902 to 928MHz making it suitable, ...

High-power broadcast-TV transmitter design should become easier with the MRF6P3300H enhancement-mode MOSFET. Designed for use in TV transmitters of 1, 5, and 10 kW, it can dissipate up to 300 W ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...