While LDMOS transistors aren’t exactly new – laterally-diffused MOSFETs have been appearing in RF power applications for decades – the particular parts used for the amp, NXP’s MRF300 power ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

Forty-five experts from industry and academia met in the magnificent city of Toledo for the second workshop on efficient RF ...

In CMOS transistor, the threshold is high and there exist a number ... the doubler as a function of the input power for different BG voltages. For the same RF input power, the output voltage obtained ...

Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process ... tolerating up to 900mA/mm saturation currents and high voltage RF-power handling capabilities. The inherent high ...