To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
In a conventional plasma etching chamber, the incident ions bombard the surface and etch holes normal to the surface; angled etching is not possible even when the surface is tilted. To overcome ...
Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based ...
Hosted on MSN10d
Plasma technique doubles etch rate for 3D NAND flash memoryUsing the charged particles found in plasma is the easiest way to create the very small but deep, circular holes needed for ...
The discovery was partially accidental, as researchers happened upon it while looking at using high-energy plasma etching to machine ... Fresh from the plasma chamber, a wood sample has a thin ...
A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch. Using a wafer-level RF source, gas penetrates the top of ...
To this end, they prepared pencil lead samples and placed them in a plasma chamber for different periods ... of the clay ...
such as a gas or plasma, is introduced into the etching chamber. The reactive species chemically modifies the surface layer of the material, creating a modified layer that is more susceptible to ...
Etching products are purified from the chamber. ALE of MoS 2 shows no Raman defect peak after etching, highlighting the low damage etching capabilities of ALE. Image Credit: Oxford Instruments Plasma ...
The researchers compared results from this process to a more advanced cryo-etching process that uses hydrogen fluoride gas to create the plasma. "Cryo etch with the hydrogen fluoride plasma showed ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results