A research team has developed high-performance diamond/ε-Ga2O3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...

Last week we covered diodes, specifically thermionic and PN junction diodes. But oh, there are more; and they’re special! One of the the most commonly used ‘specialty’ diode would have to be ...

Finally, the power diode losses - both on-state losses and switching losses - are examined in a converter circuit, including a comparison of silicon p-n diodes and 4H-SiC Schottky diodes. Learning ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

This course presents in-depth discussion and analysis of pn junction and metal-semiconductor contacts including equilibrium behavior, current and capacitance responses under bias, breakdown, ...

Reduced voltage drop allows for lower thermal management requirements relative to a traditional PN diode. This may allow for smaller, less expensive packages, but power consumption and the drop in ...

It is known that the p-n diode can be the basis of an accurate thermometer for cryogenic temperatures up to about 200°C. A constant current is maintained through the diode and the voltage across it ...

An important difference between PN and Schottky diodes is reverse recovery time when the diode switches from non-conducting to conducting state and vice versa.