Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant.

The other, molybdenum diselenide, is an "n-type" semiconductor, rich in electron charge carriers. Where the two semiconductor layers met, ...

Charge Carrier Manipulation (NMOS example): In an N-type metal-oxide-semiconductor transistor ... This creates a region rich in electrons near the gate, called an inversion layer.

A p-n junction is an interface or boundary between p-type and n-type semiconductor materials within a single semiconductor crystal. The positive (p) side contains excess holes, while the negative (n) ...

In semiconductors, there are two essential and complementary types of electrical conductivity: p-type and n-type. The p-type semiconductor features primarily free carriers carrying positive ...

Their first breakthrough was forming an inversion hole layer in a wide-bandgap semiconductor, which has been a great challenge in the solid-state electronics field, according to the university. Once ...

Aug 08, 2024: 2D layer of phosphorus pentamers shows semiconductor properties on silver surface (Nanowerk News) Phosphorus is an exciting element: It is essential for the survival of organisms and ...