When introduced into the crystal lattice of a Group IV semiconductor like silicon (Si) or germanium (Ge), which possess four valence electrons, ...

Developing Group-IV semiconductor lasers, particularly those based on germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn), has the potential to simplify integration and enable further ...

Texas Gov. Greg Abbott announced that TEL U.S. a $3.08 million semiconductor grant to support the company's R&D facility in Southeast Austin.

When introduced into the crystal lattice of a Group IV semiconductor like silicon (Si) or germanium (Ge), which possess four valence electrons, ...