When introduced into the crystal lattice of a Group IV semiconductor like silicon (Si) or germanium (Ge), which possess four valence electrons, ...

Developing Group-IV semiconductor lasers, particularly those based on germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn), has the potential to simplify integration and enable further ...

When introduced into the crystal lattice of a Group IV semiconductor like silicon (Si) or germanium (Ge), which possess four valence electrons, ...