A team of scientists from Philips and the Kavli Institute of Nanoscience in Delft, the Netherlands, has successfully grown III-V semiconductor nanowires on germanium and silicon substrates. III-V ...
“Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel design of ...
In the pursuit of next-generation electronic devices, it is not silicon semiconductors leading the way, but III-V semiconductors that are at the forefront of this endeavor. These remarkable compounds, ...
Researchers at the Hong Kong University of Science and Technology (HKUST) have developed a new integration technique for efficient integration of III-V compound semiconductor devices and silicon, ...
A research group from Spain has investigated the impact of temperature and spectral conditions on III-V solar cells operating under ultra-high concentration (UHC) conditions. Gallium arsenide (GaAs) ...
The proposed cell is based on indium gallium phosphide (InGaP), indium gallium arsenide (InGaAs) and germanium (Ge) and has an active area of 0.25 mm2. It can be used for applications in ...
The study was selected as cover of the journal Laser & Photonics Reviews. Researchers at the Hong Kong University of Science and Technology (HKUST) have developed a new integration technique for ...
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