The RIT III-V EPICenter is a III-V materials growth facility capable of providing small-batch epitaxial services. Since its beginnings in the 1970s, growth of thin films of epitaxial crystals has ...
Scientists in Spain have analyzed the impact of temperature and spectral conditions on III-V solar cells employed in concentrator photovoltaic modules. They claim to have assessed the cell behavior ...
LONDON — The high electron mobilities of some III-V compounds is making them prime candidates for future NMOS channel materials, with an indium-based gallium-arsenide (InGaAs) likely to be the ...
A team of scientists from Philips and the Kavli Institute of Nanoscience in Delft, the Netherlands, has successfully grown III-V semiconductor nanowires on germanium and silicon substrates. III-V ...
Researchers from the Hong Kong University of Science and Technology (HKUST) have reported the world's first 1.5 μm III-V lasers directly grown on the industry-standard 220 nm SOI ...
In the pursuit of next-generation electronic devices, it is not silicon semiconductors leading the way, but III-V semiconductors that are at the forefront of this endeavor. These remarkable compounds, ...
The RIT III-V EPICenter is a III-V materials growth facility capable of providing small-batch epitaxial services. Since its beginnings in the 1970s, growth of thin films of epitaxial crystals has ...
Scientists in Spain have analyzed the impact of temperature and spectral conditions on III-V solar cells employed in concentrator photovoltaic modules. They claim to have assessed the cell behavior ...
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