The RIT III-V EPICenter is a III-V materials growth facility capable of providing small-batch epitaxial services. Since its beginnings in the 1970s, growth of thin films of epitaxial crystals has ...
A team of scientists from Philips and the Kavli Institute of Nanoscience in Delft, the Netherlands, has successfully grown III-V semiconductor nanowires on germanium and silicon substrates. III-V ...
Hybrid integration of III-V semiconductors on silicon substrates brings together the superior optoelectronic properties of compound materials—such as direct-bandgap emission and high carrier ...
Researchers at the Hong Kong University of Science and Technology (HKUST) have developed a new integration technique for efficient integration of III-V compound semiconductor devices and silicon, ...
In the pursuit of next-generation electronic devices, it is not silicon semiconductors leading the way, but III-V semiconductors that are at the forefront of this endeavor. These remarkable compounds, ...
Researchers at the Hong Kong University of Science and Technology (HKUST) has recently developed a novel integration scheme for efficient coupling between III-V compound semiconductor devices and ...
Imec has proposed an approach to connectivity inside datacentres which integrates CMOS, BiCMOS and III-V chiplets. It uses cost-effective manufacturing while operating at 100GHz+ frequencies. While Si ...
The proposed cell is based on indium gallium phosphide (InGaP), indium gallium arsenide (InGaAs) and germanium (Ge) and has an active area of 0.25 mm2. It can be used for applications in ...
Researchers have recently developed a novel integration scheme for efficient coupling between III-V compound semiconductor devices and silicon components on silicon photonics (Si-photonics) platform ...
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