IXYS Corporation has introduced half-bridge MOSFET modules that are available in IXYS' proprietary ISOPLUS i4-PAC packaging. The modules provide thermal performance and temperature cycling ...
The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
1. Simplified diagram of the LMG5200 GaN FET power stage. The LMG5200 is a complete, reliable power stage, consisting of a performance optimized driver and power GaN FET. All devices are mounted on a ...
The QSiC Dual3 family of 1,200-V half-bridge MOSFET modules developed by SemiQ Inc. targets motor drives in data center cooling systems, grid converters in energy storage systems, and industrial ...
UK-based Dynex Semiconductor has announced the development of a new 450A, 650V GaN half-bridge power module, designed to ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
SemiQ will unveil 1,200V silicon carbide half-bridges packaged in S3 modules at PCIM next month. The industry-standard package is 62mm long and 26.3mm high. So far, only the part numbers and basic ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
MALVERN, Pa., May 27, 2020 (GLOBE NEWSWIRE) -- The Micro-Measurements® brand of Vishay Precision Group, Inc. (NYSE: VPG) (www.micro-measurements.com), today introduced the MRF-Series Bridge Completion ...
They will be aimed at induction heaters, welding equipment, uninterruptible power supplies photovoltaic inverters, wind inverters, energy storage, and electric vehicle battery chargers,” according to ...
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