According to the DCF valuation, Wolfspeed will not survive its restructuring process, unless it can reach profitability ...

In addition, there is no intrinsic p-type doping technique for gallium oxide. Gallium oxide wafers are easier to produce versus GaN (Gallium Nitride) and SiC (silicon Carbide) substrates. But today, ...

For context, GaN material is deposited or grown on top of another silicon or silicon carbide in a process called epitaxy to develop the wafers. However, the path to building AGNIT had multiple ...

RS: The progress of the compound semiconductor industry can be seen in the increase in substrate size. Your company talks about this, using the phrase ‘Going large’. You feel that the first ...

Keysight Technologies, Inc. KEYS has strengthened its double-pulse test portfolio, offering engineers a precise and efficient ...

Navitas Semiconductor will showcase GaN and SiC technology advancements at APEC 2025, emphasizing innovative power solutions for data centers and EV applications. Navitas Semiconductor ...

Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025 APEC takes place at Atlanta's Georgia World Congress Center from March 16th to 20th.

This breakthrough GaN/SiC technology is a vital component for next-generation defense, aerospace, and sustainable energy ...

Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved ... Integrated: A new generation of highly integrated GaN power ICs that will further simplify and ...