Chinese researchers have discovered the leading cause of defects in the promising semiconductor material gallium nitride (GaN). This material is critical for developing advanced electronics ...
With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...
Type-I heterojunctions are commonly formed using materials like gallium nitride (GaN) and gallium arsenide (GaAs). Type-II heterojunctions have a staggered band alignment, where the conduction and ...
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