Physicists at Michigan State University (MSU) have developed a new method to analyze semiconductors at the atomic level. This approach combines high-resolution microscopy with ultrafast lasers to ...

Researchers led by Greg Fuchs, Ph.D. '07, professor of applied and engineering physics at Cornell Engineering, went searching for such a spin in the popular semiconductor gallium nitride and found ...

In the new Nature Photonics paper, the team describes the analysis of gallium arsenide samples that were intentionally infused with silicon defect atoms. While this type of defect has been ...

Semiconductor processing is notoriously challenging. It is one of the most intricate feats of modern engineering due to the ...

Material Defects: Gallium oxide crystals can contain defects that affect device performance. Researchers are working on improving crystal growth techniques to minimize these defects. 2.

Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a ...

Ultra-wide bandgap: Gallium oxide has a bandgap of 4.8 eV, which is 3,000 times that of silicon, more than 8X that of SiC, and more than 4X that of GaN. Compact and efficient: Gallium oxide ...

Oct 10, 2024: Ordered defects may be key for solution-deposited semiconductors (Nanowerk News) Standard manufacturing techniques for semiconductor devices – the technologies that make electronics ...

By combining high-resolution microscopy with ultrafast laser pulses, physicists can spot single-atom “defects” on a semiconductor surface.