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They calculated the quasi-Fermi levels in molecular junctions applying an ab initio approach.Semiconductor companies are struggling to develop devices that are mere nanometers in size, and much of ...
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Interesting Engineering on MSNChina’s breakthrough in 3rd-gen semiconductor could advance military weapons - MSNThis “Fermi energy level” can be likened to the “water level” of the electronic world. A big deal for China It marks the ...
First-principles calculations shed light on semiconductor defects. The third rule describes how strain changes the position of the “pinning” Fermi level. This is an intrinsic effect occurring in ...
Fermi America and Texas Tech have announced a 5,800-acre AI campus near Amarillo, powered by 11 gigawatts and creating jobs ...
Duration: 3 hours. In this module, we will cover carrier statistics. Topics include Currents in semiconductors, Density of states, Fermi-Dirac probability function, Equilibrium carrier concentrations, ...
A new publication from Opto-Electronic Advances, 10.29026/oea.2023.230094 discusses Ferroelectric modulation of the Fermi level of graphene oxide to enhance SERS response.
A new ultra-thin electrode material: A step closer to next-generation semiconductors Dramatically improved the performance of 2D semiconductor devices by supressing the Fermi-level pinning phenomenon.
The work by Yuanyue Liu, Paul Stradins, and Su-Huai Wei, "Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier," appears in the new ...
E F,sc is the Fermi level of the semiconductor. On contact, electrons flow from the n-type semiconductor into the metal to equilibrate their initially different Fermi levels.
New technical paper titled “Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning” from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, ...
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