If you ever work with a circuit that controls a decent amount of current, you will often encounter a FET – a Field-Effect Transistor. Whether you want to control a couple of powerful LEDs ...

Thus the three basic bipolar transistor circuit configurations have equivalents with a FET; common-emitter becomes common-source, common-base becomes common-gate, and an emitter follower becomes a ...

At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...

and the metal-oxide-semiconductor field-effect transistor (MOSFET). A schematic overview of a planar n-type MOSFET, with doped source and drain regions. (Image: Azal Alothmani, Lund University) When ...

Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...

Since the discovery of graphene in 2004, research over the past two decades has advanced the use of 2D materials in ...

Basically, a nanosheet FET is a finFET on its side with a gate wrapped around it, enabling higher performance chips at lower power. Fig. 1: Planar transistors vs. finFETs vs. gate-all-around Source: ...

While conducting their study, they discovered that 2D materials can also be uniquely engineered to create an entirely new transistor architecture, which they dubbed nano-plate FET (NPFET).

A National Institute for Materials Science (NIMS) research team has developed the world's first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n ...

Historically, the feature size referred to the length of the silicon channel between source and drain in field-effect transistors (see FET). Today, the feature size is typically the smallest ...

We discuss new device structures: SOI and FinFET which replaced planner bulk transistor. Here, we first discuss the basic structure, operation and important terms related to the core unit of CMOS i.e.