As China counts on Fully Depleted Silicon On Insulator (FD-SOI) technology as a pillar central to its leapfrogging strategy, its FD-SOI ecosystem needs more application scenarios and increased ...
Researchers present 3 DICE IFF designs with transistor interleaving, the CnRx construct, and the guard gate technique at the 22 nm FD SOI technology node. April 25th, 2022 - By: Technical Paper Link ...
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