Researchers have shown that a wide-bandgap semiconductor called gallium oxide can be engineered into nanometer-scale structures that allow electrons to move much faster within the crystal structure.

Scientists observed record-breaking electron mobility — seven times higher than in conventional semiconductors — with a material made from the same elements as quartz and gold. When you purchase ...

High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.

In a recent paper published in Chem, researchers from Pohang University of Science and Technology have developed conducting two-dimensional polymers with electron mobility comparable to graphene.

A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute ...

Two dimensional (2D) semiconductors have a unique property that allows their thickness to be reduced to one or few atoms – and this property could potentially minimise the short channel effects that ...