HEMT to hold significant market share during the forecast period.

Now, physicists at MIT, the Army Research Lab, and elsewhere have achieved a record-setting level of electron mobility in a ...

High Electron Mobility Transistors (HEMTs), particularly those made from Gallium Nitride (GaN), are crucial components in modern electronic devices due to their high efficiency and performance in ...

Moreover, the devices presented a remarkable electron mobility of over 100,000 cm 2 /V/s at cryogenic temperatures. It further allows the observation of fractional quantum Hall phases under a ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Examples of these innovations include mechanically strained silicon channels, where strain enhances electron and hole mobility, as well as gate stacks composed of dielectrics with high dielectric ...

Analyzing the vibrational frequencies revealed details about valence electron locations, mobility ranges, and whether inter-molecular distances were constant or variable. This enabled the study of ...

Apple‘s MacBook Air is getting a display upgrade, but it’s not quite the one you might have been expecting. According to a report by The Elec, Apple is developing a new MacBook Air with an oxide ...

By delivering a dramatic increase in the current density of AlN Schottky barrier diodes, the team is helping these devices to ...