[Zach]’s doping method is a more localized version of the simple thermal diffusion method, which drives a dopant like phosphorus into silicon using high temperatures, but instead of using a tube ...

5" quatz tube furnaces that can go up to 1200 degrees Celcius with pure gases (oxygen, hydrogen, argon, forming gas, nitrogen) for thermal anneal, graphene growth, Si thermal oxidation, and dopant ...

SRP- 2100 is one such system that provides a range of measurement parameters, such as dopant concentration and resistivity ... including ion implantation, epi and diffusion; and yield enhancement ...