A conventional low-voltage silicon diode has a forward voltage drop of about 0.7V and a relatively low maximum reverse voltage, for example with the 1N4001 rectifier it’s 50V. For the higher ...

Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...

When looking across the discrete components in your electronic armory, it is easy to overlook the humble diode. After all, one can be forgiven for the conclusion that the everyday version of ...

650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay ...

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

The four-layer diode was the key to William Shockley's plan to revolutionize AT&T's phone system. It was a great device in theory, but not in practice -- at least not at the time when Shockley ...

With features like a low forward voltage drop, minimal capacitive charge, and high-temperature operation, these diodes are ideal for power conversion in AC/DC PFC, photovoltaic systems, and more.

Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky ...