Through via hole fabrication process by deep reactive-ion etching (DRIE): (a) Sample cleaning; (b) Deposition of mask material; (c) Transfer of desired pattern; (d) Desired pattern achieved; (e) ...

To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...

To obtain anisotropic profiles, the DSiE technique or the Deep Reactive Ion Etching (DRIE) repeatedly integrates isotropic silicon etching and passivation steps. With the help of a high-density plasma ...

Using the charged particles found in plasma is the easiest way to create the very small but deep, circular holes needed for ...

This groundbreaking technique, also referred to as MacEtch or MACE, provides ultra-high anisotropy etching that’s free from damage. It is an innovative approach that effectively addresses the ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.

Reactive Ion Etch (RIE) is a physical etch process. A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch.

At least that’s [Sam]’s plan, which his new reactive-ion etching setup aims to make possible. While his Z1 dual differential amplifier chip was a huge success, the photolithography process he ...

It's worth noting that wet etching differs from dry etching techniques, such as reactive ion etching (RIE), which use plasma to remove material from a substrate. While both techniques are used in ...

Researchers at the University at Albany’s College of Nanotechnology, Science, and Engineering now have access to a new fabrication system capable of manipulating microchip designs at the atomic level.

Using plasma to create deep, narrow channels “These processes ... However, the process, known as reactive ion etching, isn’t fully understood and could be improved. One recent development ...