To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...

Through via hole fabrication process by deep reactive-ion etching (DRIE): (a) Sample cleaning; (b) Deposition of mask material; (c) Transfer of desired pattern; (d) Desired pattern achieved; (e) ...

To obtain anisotropic profiles, the DSiE technique or the Deep Reactive Ion Etching (DRIE) repeatedly integrates isotropic silicon etching and passivation steps. With the help of a high-density plasma ...

To store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be ...

At least that’s [Sam]’s plan, which his new reactive-ion etching setup aims to make possible. While his Z1 dual differential amplifier chip was a huge success, the photolithography process he ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.

Researchers at the University at Albany’s College of Nanotechnology, Science, and Engineering now have access to a new fabrication system capable of manipulating microchip designs at the atomic level.

Reactive Ion Etch (RIE) is a physical etch process. A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch.

It's worth noting that wet etching differs from dry etching techniques, such as reactive ion etching (RIE), which use plasma to remove material from a substrate. While both techniques are used in ...

They subsequently compared the electrical characteristics of pristine, naturally formed graphene edges with those artificially processed using Reactive Ion Etching. The finding revealed that ...