They simulated a Czochralski process for an ingot with a diameter of 200 ... of Oxygen Transport Phenomena for Czochralski Silicon Crystal Growth,” published in Heliyon, the scientists explained ...
The simulation was based on a CZ crystal growth of a silicon ingot with a diameter of 200 mm and a length of 700 mm, with four different heater designs. The heaters were made of graphite and ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback