Nanowerk

Dual-gate vertical transistor enables stable nanoscale 3D chip stacking

Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports ...
Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

Graphene sensors stay stable in liquids, boosting sensitivity up to 20 times

Accurately measuring small shifts in biological markers, like proteins and neurotransmitters, or harmful chemicals in the water supply, can identify critical problems before they have a chance to ...
Semiconductor Engineering

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
CU Boulder News & Events

Method for Fabricating Corrugated Gate Dielectric-Semiconductor Interface Transistor

Today’s trend in semiconductor chip manufacturing involves the miniaturizationof transistors and increasing the density of transistors per integrated circuit. Researchers at CU Boulder have developed ...
EDN

Insulated Gate Bipolar Transistor Basics

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
The Globe and Mail

Intel puts Tri-Gate transistor on fast track

Intel says that its Tri-Gate transistor, a futuristic transistor that will let electricity flow more freely inside chips, is moving closer to reality. The Tri-Gate transistor, one of the tools that ...
Electronics Weekly

Double-gate transistor model created

With double-gate transistors becoming a serious candidate for the 45nm technology node, Freescale Semiconductor and the University of Florida have created what they claim is the first double-gate ...