A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...
GREEN ISLAND, N.Y.--(BUSINESS WIRE)-- Crystal IS, an Asahi Kasei company, today announced the successful production of a 4-inch (100 mm) diameter single-crystal aluminum nitride (AlN) substrate. This ...
MORRISVILLE, N.C., Oct. 4, 2022 /PRNewswire/ -- HexaTech, Inc. announced today the acceleration of its 100 mm diameter single crystal aluminum nitride (AlN) substrate product development program. The ...
NEW YORK & TOKYO & DÜSSELDORF--(BUSINESS WIRE)--Crystal IS, an Asahi Kasei company, today announced the successful serial production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates ...
After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of ...
The Nature Index 2026 Research Leaders reveal the leading institutions and countries/territories in the natural sciences, health sciences, applied sciences and social sciences, according to their ...
Following the first reported 100 mm diameter AlN in 2023, the company now announces improved wafer quality based on specification for UVC LEDs Comparison of Crystal IS 100 mm bulk aluminum nitride ...
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